V23990-K201-A-PM Datasheet, PDF (6/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology

V23990-K201-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
0,01
T1,T2,T3,T4,T5,T6,T7 IGBT
t_doff
t_f
t_r
t_don
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
t_f
0,01
T1,T2,T3,T4,T5,T6,T7 IGBT
t_doff
t_don
t_r
0,001
0,001
0
2
4
6
8
10 I C (A) 12
0
90
With an inductive load at
T_j =
125
°C
V_CE =
300
V
V_GE =
15
V
R_gon =
64
Ω
R_goff =
32
Ω
With an inductive load at
T_j =
125
°C
V_CE =
300
V
V_GE =
15
V
I_C =
6
A
180
R G ( Ω ) 270
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0,45
D1,D2,D3,D4,D5,D6,D7 FWD
0,4
t_rr
T_j = T_jmax -25°C
0,35
0,3
t_rr
0,25
0,2
T_j = 25°C
0,15
0,1
0,05
0
0
2
4
6
8
10 I C (A) 12
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
64
Ω
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,4
D1,D2,D3,D4,D5,D6,D7 FWD
t_rr
T_j = T_jmax -25°C
0,3
T_j = 25°C
t_rr
0,2
0,1
0
0
At
T_j =
V_R =
I_F =
V_GE =
90
25/125 °C
300
V
6
A
15
V
180
270
R g on ( Ω )
copyright Vincotech
6
Revision: 3