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| 10-PZ123BA080MR-M909L28Y Datasheet, PDF (8/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors | |||
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10-PZ123BA080MR-M909L28Y
T1, T3, T5 / D1, D3, D5
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
3000
2500
dI0/dt
dIrec/dt
D1, D3, D5 FWD
2000
1500
1000
500
0
0
5
10
15
20
25 I C (A) 30
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
700
V
16
V
4
â¦
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1, T3, T5 MOSFET
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
3000
2500
D1, D3, D5 FWD
dI0/dt
dIrec/dt
2000
1500
1000
500
0
0
4
8
12
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
16
A
16
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
16 R Gon ( â¦) 20
D1, D3, D5 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,41
K/W
IGBT thermal model values
R (C/W)
1,24E-01
3,91E-01
6,76E-01
1,21E-01
9,55E-02
Tau (s)
1,00E+00
1,66E-01
6,11E-02
5,50E-03
8,02E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,70
K/W
FWD thermal model values
R (C/W)
4,56E-02
1,65E-01
7,86E-01
3,27E-01
2,54E-01
1,20E-01
Tau (s)
3,21E+00
3,88E-01
6,52E-02
1,11E-02
2,71E-03
6,15E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
8
Revision: 1
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