10-PZ123BA080MR-M909L28Y Datasheet, PDF (6/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080MR-M909L28Y
T1, T3, T5 / D1, D3, D5
Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
t_doff
0,1
t_f
0,01
t_don
t_r
0,001
0
5
10
15
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
16
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,02
T1, T3, T5 MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
0,01
T1, T3, T5 MOSFET
t_doff
t_r
t_don
t_f
0,001
20
25 _{I D (A)} 30
0
4
8
With an inductive load at
T_j =
125
°C
V_DS =
700
V
V_GS =
16
V
I_C =
16
A
12
16
R G ( Ω) 20
D1, D3, D5 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,02
D1, D3, D5 FWD
0,016
0,012
0,008
t_{rr Low T}
t_{rr High T}
0,016
0,012
0,008
t_{rr Low T}
t_{rr High T}
0,004
0,004
0
0
5
10
15
20
25 _{I C (A)} 30
0
0
4
8
12
16 _{R Gon ( Ω)} 20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
16
V
4
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
16
A
16
V
copyright Vincotech
6
Revision: 1