10-PZ123BA080MR-M909L28Y Datasheet, PDF (5/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080MR-M909L28Y
T1, T3, T5 / D1, D3, D5
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
2
1,6
T1, T3, T5 MOSFET
E_{on Low T}
1,2
E_{on High T}
0,8
E_{off High T}
0,4
E_{off Low T}
0
0
5
10
15
20
25
I C (A) ³⁰
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
700
V
16
V
4
Ω
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,07
D1, D3, D5 FWD
0,06
0,05
0,04
E_{rec Low T}
0,03
E_{rec High T}
0,02
0,01
0
0
5
10
15
20
25 _{I C (A)} 30
With an inductive load at
T_j =
25/125 °C
V_DS =
700
V
V_GS =
16
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
2
T1, T3, T5 MOSFET
1,6
E_{on Low T}
1,2
E_{on High T}
0,8
0,4
0
0
4
8
12
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
700
V
16
V
16
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V_DS =
700
V
V_GS =
16
V
I_D =
16
A
E_{off High T}
E_{off Low T}
16 _{R G ( Ω )} 20
D1, D3, D5 FWD
E_{rec Low T}
E_{rec High T}
16 _{R G ( Ω )} 20
copyright Vincotech
5
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