10-PZ123BA080MR-M909L28Y Datasheet, PDF (7/16 Pages) Vincotech – Ultra Low Inductance with integrated DC-capacitors

10-PZ123BA080MR-M909L28Y
T1, T3, T5 / D1, D3, D5
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,2
0,16
0,12
0,08
Q_{rr Low T}
Q_{rr High T}
0,04
0
0
At
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
16
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
15
12
9
I_{RRM High T}
6
I_{RRM Low T}
3
0
0
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
700
V
16
V
4
Ω
D1, D3, D5 FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
0,2
0,16
0,12
0,08
0,04
20
25 _{I C (A)} 30
0
0
4
8
12
At
Tj =
VR =
IF =
VGS =
25/125 °C
700
V
16
A
16
V
D1, D3, D5 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
15
12
9
6
3
0
20
25 _{I C (A)} 30
0
4
8
12
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
700
V
16
A
16
V
D1, D3, D5 FWD
Q_{rr Low T}
Q_{rr High T}
16 _{R Gon ( Ω)} 20
D1, D3, D5 FWD
I_{RRM High T}
I_{RRM Low T}
16 R _Gon ( Ω) 20
copyright Vincotech
7
Revision: 1