V23990-P849-X4X-P2-14 Datasheet, PDF (7/20 Pages) Vincotech – Industrial Drives Embedded Generation

V23990-P849-A48/A49/C49/C49-PM
preliminary datasheet
Output Inverter
Figure 9
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,6
Output inverter FRED diode
Figure 10
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
30
Output inverter FRED diode
0,5
25
0,4
20
0,3
15
0,2
10
0,1
5
0
0
At
T_j =
V_R =
I_F =
V_GE =
30
60
125
°C
600
V
8
A
±15
V
90
120
150
R_Gon (Ω)
0
0
30
60
At
T_j =
125
°C
V_R =
600
V
I_F =
8
A
V_GE =
±15
V
90
120
150
R_Gon(Ω)
Figure 11
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
Output inverter FRED diode
2
1,6
1,2
0,8
0,4
0
0
30
60
90
120
150
R_Gon (Ω)
At
T_j =
125
°C
V_R =
600
V
I_F =
8
A
V_GE =
±15
V
Figure 12
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(R_gon)
3000
Output inverter FRED diode
2500
dI0/dt
2000
1500
1000
500
dIrec/dt
0
0
30
60
At
T_j =
125
°C
V_R =
600
V
I_F =
8
A
V_GE =
±15
V
90
120 _{RGon (Ω)} 150
copyright Vincotech
7
Revision: 2