V23990-P849-X4X-P2-14 Datasheet, PDF (6/20 Pages) Vincotech – Industrial Drives Embedded Generation

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_c)
1,5
1,25
1
0,75
0,5
0,25
0
0
4
8
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
32
Ω
R_goff =
32
Ω
Figure 7
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
t_f
0,01
V23990-P849-A48/A49/C49/C49-PM
preliminary datasheet
Output Inverter
Output inverter IGBT
E_on
E_off
Erec
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
1,5
1,25
1
0,75
0,5
0,25
12
16
I_C (A)
0
0
30
60
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
8
A
Output inverter IGBT
t_doff
t_don
t_r
Figure 8
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
0,01
Output inverter IGBT
E_on
E_off
Erec
90
120 R_G(Ω) 150
Output inverter IGBT
t_doff
t_don
t_f
t_r
0,001
0
4
8
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
32
Ω
R_goff =
32
Ω
12
16
IC (A)
0,001
0
30
60
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
8
A
90
120 _{RG (Ω)} 150
copyright Vincotech
6
Revision: 2