V23990-P849-X4X-P2-14 Datasheet, PDF (4/20 Pages) Vincotech – Industrial Drives Embedded Generation

Parameter
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Power dissipation given Epcos-Typ
B-value
Symbol
V23990-P849-A48/A49/C49/C49-PM
preliminary datasheet
Characteristic Values
Conditions
V_GE(V) or
V_GS(V)
V_r(V) or
V_CE(V) or
V_DS(V)
I_C(A) or I_F(A)
or I_D(A)
T(°C)
Value
Min
Typ
Max
Unit
V_GE(th) VCE=VGE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_d(off)
Rgon=64Ohm
15
t_f
Rgoff=64Ohm
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
15
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
600
25
960
0,00015
4
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
4
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
4
Tj=25°C
5
5,8
6,5
V
1,6
1,96
2,2
2,17
V
0,05
mA
200
nA
none
Ω
90
24
226
99
0,34
0,30
250
ns
ns
ns
ns
mWs
mWs
pF
25
pF
15
pF
25
nC
2,93
K/W
V_F
I_r
I_RRM
t_rr
Q_rr Rgon=64Ohm
15
di(rec)max
/dt
E_rec
R_thJH
Thermal grease
thickness≤50um
λ = 1 W/mK
4
1200
600
4
Tj=25°C
1
1,91
2,35
V
Tj=125°C
1,84
250
mA
Tj=25°C
A
Tj=125°C
5
Tj=25°C
ns
Tj=125°C
446
Tj=25°C
uC
Tj=125°C
0,76
Tj=25°C
A/ms
Tj=125°C
40
Tj=25°C
Tj=125°C
0,32
mWs
3,98
K/W
R₂₅
R₁₀₀
P
Tol. ±13%
Tol. ±5%
B_(25/100) Tol. ±3%
Tj=25°C
19,1
22
24,9
kΩ
Tj=100°C
1411
1486
1560
Tj=25°C
210
mW
Tj=25°C
4000
K
copyright Vincotech
4
Revision: 2