V23990-P849-X4X-P2-14 Datasheet, PDF (11/20 Pages) Vincotech – Industrial Drives Embedded Generation

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,75
0,6
0,45
0,3
E_rec
E_off
0,15
0
0
2
4
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
64
Ω
R_goff =
64
Ω
Figure 7
Typical switching times as a
function of collector current
t = f(I_C)
1
t_f
0,1
t_don
t_r
0,01
0,001
0
2
4
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
64
Ω
R_goff =
64
Ω
Brake
V23990-P849-A48/A49/C49/C49-PM
preliminary datasheet
Brake IGBT
E_on
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,75
0,6
0,45
0,3
0,15
6
I_C (A) ⁸
0
0
60
120
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
4
A
Brake IGBT
t_doff
Figure 8
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
0,01
Brake IGBT
E_on
E_rec
E_off
180
240 _{RG (Ω)} 300
Brake IGBT
t_don
t_f
t_r
6
8
IC (A)
0,001
0
60
120
180
240 _{RG (Ω)} 300
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
4
A
copyright Vincotech
11
Revision: 2