V23990-P823-F10-PM Datasheet, PDF (7/15 Pages) Vincotech – Compact and Low Inductance Design

Output Inverter
V23990-P823-F10-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI ₀/dt ,dI _rec/dt = f(I _c)
6000
dI₀/dt
dI_rec/dt
5000
Output inverter FWD
4000
3000
2000
1000
0
0
20
40
60
80
I C (A) 100
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
300
V
±15
V
8
Ω
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI ₀/dt ,dI _rec/dt = f(R _gon)
Output inverter FWD
12000
dI0/dt
10000
dIrec/dt
8000
6000
4000
2000
0
0
8
16
24
32 ^R Gon ^{( Ω)} 40
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
300
V
50
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z _thJH = f(t _p)
10¹
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z _thJH = f(t _p)
10¹
Output inverter FWD
10⁰
10⁰
10^-1
10^-2
10^-5
10^-4
10^-3
10^-2
At
D=
R = thJH
t_p / T
1,24
K/W
IGBT thermal model values
R (K/W)
0,02
0,10
0,30
0,49
0,23
0,04
0,06
Tau (s)
1,3E+01
1,7E+00
3,0E-01
9,8E-02
1,6E-02
2,2E-03
3,4E-04
copyright Vincotech
D = 0,5
0,2
0,1
10^-1
0,05
0,02
0,01
0,005
0.000
10^-2
10^-1
10^{0 t p (s)}
10¹10
10^-5
10^-4
10^-3
10^-2
At
D=
R _thJH =
t_p / T
1,65
K/W
FWD thermal model values
R (K/W)
0,02
0,09
0,27
0,72
0,36
0,09
0,10
Tau (s)
1,5E+01
1,7E+00
3,1E-01
8,9E-02
1,4E-02
1,3E-03
2,4E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-1
10⁰
t p (s) ₁₀1₁₀
7
12 Aug. 2015 / Revision 3