V23990-P823-F10-PM Datasheet, PDF (5/15 Pages) Vincotech – Compact and Low Inductance Design

Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
1
t_f
0,1 _tdon
0,01
Output Inverter
V23990-P823-F10-PM
datasheet
Output inverter IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1
t_doff
0,1
t_r
0,01
Output inverter IGBT
t_doff
t_don
t_f
t_r
0,001
0
0,001
20
40
60
80
IC (A) 100
0
8
16
24
32 R G ( Ω ) 40
With an inductive load at
T_j =
150
°C
V _CE =
300
V
V _GE =
±15
V
R _gon =
8
Ω
R _goff =
8
Ω
With an inductive load at
T_j =
150
°C
V _CE =
300
V
V _GE =
±15
V
I_C =
50
A
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,2
0,16
0,12
0,08
0,04
Output inverter FWD
t_rr
t_rr
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,4
Output inverter FWD
t_rr
t_rr
0,3
0,2
0,1
0
0
20
40
60
80
I C (A) 100
0
0
8
16
24
32 R Gon ( Ω ) 40
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
300
V
±15
V
8
Ω
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
300
V
50
A
±15
V
copyright Vincotech
5
12 Aug. 2015 / Revision 3