V23990-P823-F10-PM Datasheet, PDF (2/15 Pages) Vincotech – Compact and Low Inductance Design

V23990-P823-F10-PM
datasheet
Characteristic Values
Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Conditions
V _r [V] I _C [A]
V _GE [V] or
or
or
V _CE [V] I _F [A] T j
V _GS [V] or
or
V _DS [V] I _D [A]
Value
Unit
Min Typ Max
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
VCE=VGE
15
0
20
Rgoff=8 Ω
Rgon=8 Ω
±15
f=1MHz
0
Vcc=480
Thermal grease
thickness≤50um
λ = 1 W/mK
±15
600
0
300
25
0,0008
Tj=25°C
5
Tj=150°C
5,8
6,5
V
50
Tj=25°C
1,1
1,56
2,1
V
Tj=150°C
1,79
Tj=25°C
Tj=150°C
0,35
mA
Tj=25°C
Tj=150°C
650
nA
none
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
50
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
98
19
16
150
173
89
115
0,50
0,75
1,18
1,63
ns
mWs
3140
Tj=25°C
200
pF
93
50
Tj=25°C
310
nC
1,24
K/W
V_F
50
I _RRM
t _rr
Q _rr
Rgon=8 Ω
±15
300
50
( di _rf/dt )_max
E _rec
R _th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
Tj=25°C
1,2
1,63
2,1
V
Tj=150°C
1,60
Tj=25°C
28
A
Tj=150°C
79
Tj=25°C
144
ns
Tj=150°C
147
Tj=25°C
1,91
nC
Tj=150°C
4,71
Tj=25°C
Tj=150°C
1357
4135
A/µs
Tj=25°C
Tj=150°C
0,55
1,09
mWs
1,65
K/W
R ₂₅
D _{R /R}
P
B _(25/100)
Tol. ±5%
R100=435Ω
Tol. ±3%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
4,46
4,7
2,6
210
3530
4,94
kΩ
%/K
mW
K
copyright Vincotech
2
12 Aug. 2015 / Revision 3