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V23990-P823-F10-PM Datasheet, PDF (4/15 Pages) Vincotech – Compact and Low Inductance Design
Output Inverter
V23990-P823-F10-PM
datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I c)
3
2,5
2
1,5
1
0,5
Output inverter IGBT
Eoff
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R G)
3
2,5
2
Eoff
1,5
Eon
1
Eon:
0,5
Output inverter IGBT
Eon
Eoff
Eon
Eoff
0
0
20
40
60
80
I C (A) 100
0
0
8
16
24
32 R G ( Ω ) 40
With an inductive load at
Tj =
V CE =
25/150 °C
300
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
With an inductive load at
Tj =
V CE =
25/150 °C
300
V
V GE =
±15
V
IC =
50
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
2
Output inverter IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
1,5
Output inverter IGBT
1,2
1,5
Erec
0,9
Erec
1
0,6
Erec
0,5
Erec
0,3
0
0
20
40
60
80 I C (A) 100
0
0
8
16
24
32 R G ( Ω ) 40
With an inductive load at
Tj =
V CE =
V GE =
R gon =
25/150 °C
300
V
±15
V
8
Ω
With an inductive load at
Tj =
V CE =
V GE =
IC =
25/150 °C
300
V
±15
V
50
A
copyright Vincotech
4
12 Aug. 2015 / Revision 3