10-FZ07NBA100SM10-M305L68 Datasheet, PDF (7/16 Pages) Vincotech – Symmetric booster

10-FZ07NBA100SM10-M305L68
datasheet
Boost IGBT (T1, T2) / Boost FWD (D1, D2)
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
6
5
D1,D2
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
6
5
4
4
3
3
Q_{rr Low T}
2
2
1
1
0
0
0
25
50
75
100
125
150
0
4
8
12
At
I C (A)
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
4
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
70
A
15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
175
150
D1,D2
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
175
150
125
125
100
100
I_{RRM Low T}
75
75
50
50
25
25
0
0
25
50
75
100
125
150
I C (A)
0
0
4
8
12
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
4
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
70
A
15
V
D1,D2
Q_{rr High T}
Q_{rr Low T}
16
20
R gon ( Ω)
D1,D2
I_{RRM High T}
I_{RRM Low T}
16
20
R gon ( Ω)
copyright Vincotech
7
27 Okt 2014 / Revision: 2