10-FZ07NBA100SM10-M305L68 Datasheet, PDF (5/16 Pages) Vincotech – Symmetric booster

10-FZ07NBA100SM10-M305L68
datasheet
Boost IGBT (T1, T2) / Boost FWD (D1, D2)
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
2,5
T1, T2
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
2,5
2
2
E_{on High T}
1,5
1,5
E_{on Low T}
E_{off High T}
1
1
E_{off Low T}
0,5
0,5
0
0
25
50
75
100
125
150
I C (A)
0
0
4
8
12
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
15
V
4
Ω
4
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
15
V
70
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
1,5
1,2
D1,D2
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
1,5
1,2
0,9
0,9
0,6
0,6
E_{rec Low T}
0,3
0,3
0
0
0
25
50
75
100
125
150
I C (A)
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
15
V
R_gon =
4
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
15
V
I_C =
70
A
T1, T2
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
16
20
R_G(Ω )
D1,D2
E_{rec High T}
E_{rec Low T}
16
20
R_G (Ω)
copyright Vincotech
5
27 Okt 2014 / Revision: 2