10-FZ07NBA100SM10-M305L68 Datasheet, PDF (6/16 Pages) Vincotech – Symmetric booster

10-FZ07NBA100SM10-M305L68
datasheet
Boost IGBT (T1, T2) / Boost FWD (D1, D2)
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
0,01
T1, T2
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
t_don
t_r
t_f
0,01
T1, T2
t_doff
t_don
t_r
t_f
0,001
0,001
0
25
50
75
100
125
150
0
4
8
12
I C (A)
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
15
V
R_gon =
4
Ω
R_goff =
4
Ω
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
15
V
I_C =
70
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,15
D1,D2
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,15
0,12
0,12
t_{rr High T}
0,09
0,09
0,06
0,06
t_{rr Low T}
0,03
0,03
0,00
0,00
0
25
50
75
100
125
150
0
4
8
12
I C (A)
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
4
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
70
A
15
V
16
20
RG(Ω )
D1,D2
t_{rr High T}
t_{rr Low T}
16
20
R gon ( Ω)
copyright Vincotech
6
27 Okt 2014 / Revision: 2