10-FZ07NBA100SM10-M305L68 Datasheet, PDF (3/16 Pages) Vincotech – Symmetric booster

Parameter
Boost IGBT (T1, T2)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Boost Inverse Diode (D10, D20)
Diode forward voltage
Thermal resistance chip to heatsink
Boost FWD (D1, D2)
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
10-FZ07NBA100SM10-M305L68
datasheet
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
0,001
Tj=25°C
Tj=125°C
3,3
4
4,7
V
V_CE(sat)
15
100
Tj=25°C
1
1,63
2,5
Tj=125°C
1,78
V
I_CES
0
650
Tj=25°C
Tj=125°C
0,080
mA
I_GES
20
0
Tj=25°C
Tj=125°C
40
nA
R_gint
none
Ω
t_d(on)
t_r
t_d(off)
Rgoff=4 Ω
±15
350
70
t_f
Rgon=4 Ω
E_on
E_off
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
24
23
10
11
135
156
5
9
0,700
1,160
0,310
0,560
ns
mWs
C_ies
6000
C_oss f=1MHz
0
25
Tj=25°C
100
pF
C_rss
22
Q_Gate
15
520
100
Tj=25°C
240
nC
R_thJH
Phase-Change
Material
0,70
K/W
V_F
R_thJH
Phase-Change
Material
20
Tj=25°C
Tj=125°C
1,73
1,60
V
2,87
K/W
V_F
100
Tj=25°C
1,5
2,29
2,5
Tj=125°C
1,69
V
I_r
650
Tj=25°C
Tj=125°C
20
µA
I_RRM
Tj=25°C
73
Tj=125°C
121
A
t_rr
Tj=25°C
26,4
Tj=125°C
68,4
ns
Q_rr Rgon=4 Ω
±15
350
70
Tj=25°C
Tj=125°C
1,3
3,9
µC
di(rec)max
/dt
Tj=25°C
Tj=125°C
10424
5304
A/µs
E_rec
Tj=25°C
Tj=125°C
0,23
0,79
mWs
R_thJH
Phase-Change
Material
0,93
K/W
R
∆R/R R100=1486 Ω
P
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
-12
+14
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright Vincotech
3
27 Okt 2014 / Revision: 2