10-FY07NPA200SM02-L366F08 Datasheet, PDF (5/28 Pages) Vincotech – Low inductive design with integrated DC capacitor

10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switch
Parameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
Thermal
Thermal resistance junc tion to sink
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Symbol
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
rg
C _ies
C _oes f=1 MHz
C _res
Q_g
Conditions
Value
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min Typ Max
Unit
25
0,002
125
25
15
200
125
150
25
0
650
125
25
20
0
125
0
25
25
15
520
200
25
3,2
4
4,8
V
1,69
2,1
1,86
V
1,96
200
µA
200
nA
none
Ω
13120
194
pF
42
420
nC
R _th(j-s)
ph a s e -cha ng e
ma te ria l
ʎ=3,4W /mK
t d(on)
t_r
t d(off)
R goff = 4 Ω
R gon = 4 Ω
t_f
E on
Q rFWD = 4,5 µC
Q _rFWD = 9,2 µC
E _off
±15
350
120
25
125
25
125
25
125
25
125
25
125
25
125
0,65
76
62
12
14
153
171
7
12
1,709
2,573
0,542
1,009
K/W
ns
mWs
Copyright Vincotech
5
16 Nov. 2015 / Revision 3