10-FY07NPA200SM02-L366F08 Datasheet, PDF (21/28 Pages) Vincotech – Low inductive design with integrated DC capacitor

10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Characteristics
Figure 9.
Typical recovered charge as a f unction of collector current
Q r = f(I C)
10
8
FWD
Q_r
Figure 10.
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(R gon)
10
8
FWD
Q_r
6
6
Q_r
4
4
Q_r
2
2
At ⁰ ₀
20
40
60
At
V CE =
350
V
V GE =
±15
V
R gon =
4
Ω
80
100
120
140
I C (A)
25 °C
T j:
125 °C
0
0
2
4
6
At
VCE=
350
V
V GE =
±15
V
I C=
120
A
8
10
12
14
16
18
Rgon (Ω)
25 °C
T j:
125 °C
Figure 11.
Typical peak reverse recovery current current as a f unct ion of collect or current
I RM = f(I C)
150
120
90
FWD
I_RM
I_RM
60
30
0
0
20
40
60
At
V CE = 350
V
V GE =
±15
V
R gon =
4
Ω
80
100
120
140
I C (A)
25 °C
T j:
125 °C
Figure 12.
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(R gon)
180
FWD
150
120
90
I_RM
60
I_RM
30
0
0
2
4
6
At
V CE =
350
V
V GE =
±15
V
IC =
120
A
8
10
12
14
16
18
R go n (Ω)
25 °C
T j:
125 °C
Copyright Vincotech
21
16 Nov. 2015 / Revision 3