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| 10-FY07NPA200SM02-L366F08 Datasheet, PDF (11/28 Pages) Vincotech – Low inductive design with integrated DC capacitor | |||
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10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Inverse Diode Characteristics
Typical forward characteristics
I F = f(V F)
600
Diode
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
100
Diode
500
400
300
200
100
0
0
1
2
tp =
250
µs
3
4
25 °C
T j:
125 °C
150 °C
5
VF (V)
10-1
10-2
10-4
10-3
10-2
10-1
D=
R th(j-s) =
tp / T
0,58
K/W
Diode thermal model values
R (K/W)
5,80E-02
Ï (s)
8,20E+00
8,03E-02
1,08E+00
1,46E-01
1,95E-01
2,11E-01
6,41E-02
6,77E-02
1,10E-02
1,80E-02
2,03E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
101
102
tp (s)
Thermistor Characteristics
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
25000
Typical Thermistor resistance values
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
11
16 Nov. 2015 / Revision 3
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