10-FY07NPA200SM02-L366F08 Datasheet, PDF (20/28 Pages) Vincotech – Low inductive design with integrated DC capacitor

10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Out. Boost Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
IGBT
Figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(r g)
1
t_{d(off )}
0,1
0,1
t_d(on)
t_r
0,01
t_f
0,01
IGBT
t_{d(off )}
t_d(on)
t_r
t_f
0,001
0
20
40
60
80
With an induc tive load at
Tj=
125
°C
V CE =
350
V
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
Figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,12
0,1
100
120
140
I _C (A)
FWD
t_rr
0,08
t_rr
0,06
0,04
0,02
0
0
20
40
At
V CE=
350
V
V GE =
±15
V
R gon =
4
Ω
60
80
100
120
140
I_C (A)
25 °C
T j:
125 °C
0,001
0
2
4
6
With an inductive load at
Tj=
125
°C
V CE =
350
V
V GE =
±15
V
IC =
120
A
8
10
12
14
16
18
r_g (Ω)
Figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,15
0,12
0,09
FWD
t_rr
t_rr
0,06
0,03
0
0
2
4
6
At
V CE =
350
V
V GE =
±15
V
IC =
120
A
8
10
12
14
16
18
R_{g on} (Ω)
25 °C
Tj:
125 °C
Copyright Vincotech
20
16 Nov. 2015 / Revision 3