 English |
|
|
|
|
|
|
|
| 10-F106NIA100SA-M135F Datasheet, PDF (3/27 Pages) Vincotech – Neutral-point-Clamped inverter | |||
| |||
| ◁ |
10-xx06NIA100SA-M135Fxx
Characteristic Values
Parameter
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Symbol
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
VGE(th) VCE=VGE
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
td(off)
tf
Rgon=8 â¦
Rgoff=8 â¦
Eon
Eoff
Cies
0,0016
Tj=25°C
Tj=150°C
15
100
Tj=25°C
Tj=150°C
0
600
Tj=25°C
Tj=150°C
20
0
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
±15
350
100
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Coss f=1MHz
0
25
Tj=25°C
Crss
QGate
15
480
100
Tj=25°C
RthJH
Thermal grease
thicknessâ¤50um
λ = 0,81 W/mK
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
VF
IRRM
trr
Qrr Rgon=8 â¦
di(rec)max
/dt
Erec
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
±15
350
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thicknessâ¤50um
λ = 0,81 W/mK
Note: All characteristic values are related to gates of paralell IGBTs connected together
Value
Min
Typ
Max
5
5,8
6,5
1,05
1,50
1,85
1,73
60
1,4
none
160
189
26
31
270
296
100
123
1,887
2,405
2,903
3,808
6280
400
186
620
0,699
1,4
1,70
1,9
1,71
86
113
127
164
5,072
9,357
3385
1871
1,154
2,238
1,360
Unit
V
V
µA
µA
â¦
ns
mWs
pF
nC
K/W
V
A
ns
µC
A/µs
mWs
K/W
Copyright by Vincotech
3
Revision: 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese