10-FZ07NBA075SM-P916L58 Datasheet, PDF (14/19 Pages) Vincotech – High efficiency symmetric boost

10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Definitions
General conditions
Tj
R gon
= 125 °C
= 4Ω
R goff
= 4Ω
Figure 1.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
150
%
t_doff
IGBT
100
V_{GE 90%}
V_{CE 90%}
50
V_CE
0
V_GE
I_C
t_Eoff
I_{C 1%}
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
200
%
I_C
150
V_CE
100
t_don
50
V_{GE 10%}
0
I_{C 10%}
t_Eon
V_GE
V_{CE 3%}
IGBT
-50
-0,1
-0,05
0
0,05
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
Figure 3.
0
V
15
V
350
V
75
A
0,131
µs
0,179
µs
Turn-of f Swit ching Wavef orms & def init ion of t f
150
%
125
I_C
100
fitted
75
50
25
V_CE
0
t_f
0,1
0,15
0,2
t (µs)
IGBT
I_{C 90%}
I_{C 60%}
I_{C 40%}
I_C10%
-25
0,05
V C (100%) =
I C (100%) =
tf =
0,07
0,09
0,11
350
V
75
A
0,008
µs
0,13
0,15
t ( µs)
-50
2,96
3
3,04
3,08
3,12
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
Figure 4.
0
V
15
V
350
V
75
A
0,023
µs
0,124
µs
Turn-on Swit ching Wavef orms & def init ion of tr
200
%
175
150
3,16
I_C
125
100
I_{C 90%}
75
t_r
50
25
V_CE
I_{C 10%}
0
-25
3,01
V C (100%) =
I C (100%) =
tr =
3,03
3,05
3,07
3,09
350
V
75
A
0,015
µs
3,11
3,2
3,24
t (µs)
IGBT
3,13
3,15
t (µs)
Copyright Vincotech
14
22 Feb. 2016 / Revision 1