10-FZ07NBA075SM-P916L58 Datasheet, PDF (11/19 Pages) Vincotech – High efficiency symmetric boost

10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
IGBT
Figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(r g)
1
IGBT
0,1
t_d(on)
0,01
t_r
t_{d(off )}
t_f
0,1
0,01
t_{d(off )}
t_d(on)
t_r
t_f
0,001
0
25
50
With an induc tive load at
Tj=
150
°C
V CE =
350
V
V GE =
15/0
V
R gon =
4
Ω
R goff =
4
Ω
75
100
Figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,16
0,12
0,08
125
150
I _C (A)
FWD
t_rr
t_rr
t_rr
0,001
0
2
4
6
With an inductive load at
Tj=
150
°C
V CE =
350
V
V GE =
15/0
V
IC =
75
A
8
10
12
14
16
18
r_g (Ω)
Figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,16
0,12
0,08
FWD
t_rr
t_rr
t_rr
0,04
0,04
0
0
25
At
V CE=
350
V GE =
15/0
R gon =
4
50
V
V
Ω
75
T j:
100
125
150
I_C (A)
25 °C
125 °C
150 °C
0
0
2
4
6
At
V CE =
350
V
V GE =
15/0
V
IC =
75
A
8
10
12
14
16
18
R_{g on} (Ω)
25 °C
Tj:
125 °C
150 °C
Copyright Vincotech
11
22 Feb. 2016 / Revision 1