10-FZ07NBA075SM-P916L58 Datasheet, PDF (10/19 Pages) Vincotech – High efficiency symmetric boost

10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 1.
Typical swit ching energy losses as a f unction of collector current
E = f(I C)
3
2,5
2
IGBT
E_on
E_on
E_on
1,5
1
E_off
E_off
0,5
E_off
0
0
25
50
With an induc tive load at
V CE =
350
V
V GE =
15/0
V
R gon =
4
Ω
R goff =
4
Ω
75
T j:
100
125
25 °C
125 °C
150 °C
150
I_C (A)
Figure 3.
Typical reverse recovered energy loss as a f unction of collector current
E rec = f(I c)
2
1,5
FWD
E_rec
E_rec
1
E_rec
0,5
Figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(rg)
3
2,5
2
1,5
IGBT
E_on
E_on
E_{o n}
1
0,5
0
0
2
4
6
With an inductive load at
V CE =
350
V
V GE =
15/0
V
IC =
75
A
E_off
E_off
E_{o ff}
8
10
12
14
16_{Rg ( Ω)} 18
25 °C
T j:
125 °C
150 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(r g )
1,6
FWD
1,2
E_rec
E_rec
0,8
0,4
E_rec
0
0
25
50
With an induc tive load at
V CE =
350
V
V GE =
15/0
V
R gon =
4
Ω
75
T j:
100
125
25 °C
125 °C
150 °C
150
I C (A)
0
0
2
4
6
With an inductive load at
V CE =
350
V
V GE =
15/0
V
IC =
75
A
8
10
12
14
16
18
r_g (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
10
22 Feb. 2016 / Revision 1