10-FZ07NBA075SM-P916L58 Datasheet, PDF (13/19 Pages) Vincotech – High efficiency symmetric boost

10-FZ07NBA075SM-P916L58
datasheet
Boost Switching Characteristics
Figure 13.
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F/dt ,di rr/dt = f(I c)
6000
5000
di_F / dt
di_{r r}/dt
FWD
4000
3000
2000
1000
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(R g)
7500
di _F / dt
di _{r r}/dt
6000
4500
3000
1500
0
0
25
At
V CE = 350
V GE =
15/0
R gon =
4
50
V
V
Ω
75
T j:
100
125
25 °C
125 °C
150 °C
150
IC (A)
0
0
2
4
6
At
V CE =
350
V
V GE =
15/0
V
I C=
75
A
8
10
12
14
16
18
Rg on (Ω)
25 °C
T j:
125 °C
150 °C
Figure 15.
Reverse bias saf e operating area
I C = f(V CE)
175
150
I_{C MAX}
IGBT
125
100
75
50
25
0
0
At
100
200
300
400
500
600
700
VC E (V)
Tj =
175
°C
R gon =
4
Ω
R goff =
4
Ω
Copyright Vincotech
13
22 Feb. 2016 / Revision 1