3N60_15 Datasheet, PDF (7/9 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

3N60
 TYPICAL CHARACTERISTICS
Power MOSFET
On-Resistance Variation vs.
Drain Current and Gate Voltage
6
5
4
V_GS=20V
3
V_GS=10V
2
1
Note: T_J=25℃
0
0
2
4
6
8 10 12
Drain Current, I_D (A)
On State Current vs.
Allowable Case Temperature
10
1
Notes:
1. V_GS=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, V_SD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 9
QW-R502-110.H