3N60_15 Datasheet, PDF (1/9 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
3N60
3A, 600V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 3N60 is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
 FEATURES
* V_DS = 600V, I_D = 3A
* R_DS(ON) < 3.6Ω @V_GS = 10 V
* Ultra low gate charge ( typical 18 nC )
* Low reverse transfer capacitance ( C_RSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
Power MOSFET
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