3N60_15 Datasheet, PDF (3/9 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

3N60
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V_DSS
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
600
V
±30
V
3.0
A
3.0
A
12
A
200
mJ
7.5
mJ
4.5
V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
TO-220F3
P_D
75
34
W
TO-251/TO-252
50
Junction Temperature
T_J
+150
°C
Operating Temperature
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J.
3. L=44.4mH, I_AS=3A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤3.0A, di/dt≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F3
TO-251/TO-252
SYMBOL
θ_JA
θ_JC
RATING
62.5
62.5
110
1.67
3.68
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-110.H