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| 3N60_15 Datasheet, PDF (4/9 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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3N60
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC =25â, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0 V, ID=250 μA
Drain-Source Leakage Current
IDSS
VDS=600 V, VGS=0 V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=30 V, VDS=0 V
VGS=-30 V, VDS=0 V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10 V, ID=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=0.5A, RG=25â¦
(Note 1, 2)
VDS=50V, ID=1.3A, IG=100μA
VGS=10V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0 V, IS=3.0A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
VGS=0V, IS=3.0A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty cycleâ¤2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
600
V
10 μA
100 nA
-100 nA
0.6
V/â
2.0
4.0 V
2.8 3.6 â¦
350 450 pF
50 65 pF
5.5 7.5 pF
35 50 ns
60 70 ns
100 150 ns
65 75 ns
18.5 23 nC
5.2
nC
4.9
nC
1.4 V
3.0 A
12 A
210
ns
1.2
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-110.H
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