UF730 Datasheet, PDF (6/6 Pages) Unisonic Technologies – 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET

UF730
TYPICAL PERFORMANCE CUVES
1500
1200
900
600
300
Capacitance vs. Drain to Source Voltage
C_ISS
V_GS=0V, f=1MHz
CISS=CGS+CGD
C_RSS=C_GD
C_OSS‘•C_DS+C_GD
C_OSS
C_RSS
0
1
10
100
Drain to Source Voltage, VDS (V)
Source to Drain Diode Voltage
100 _{Pulse Duration=80È°s}
Duty Cycle = 0.5% Max
10
T_J=150Â¥
1
T_J=25Â¥
0.1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage, V_SD (V)
MOSFET
Transconductancevs. Drain Current
10 _{Pulse Duration=80È°s}
Duty Cycle = 0.5% Max
8
6
T_J=25Â¥
4
T_J=150Â¥
2
0
0
2
4
6
8
10
Drain Current, ID (A)
Gate to Source Voltage vs. Gate Charge
20 _ID=5.5A
16
12
V_DS=320V
V_DS=200V
V_DS=80V
8
4
00
8
16
24
32
40
Gate Charge, Q_G (nC)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-077,A