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| UF730 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET | |||
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UF730
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
(Note 1)
VSD
TJ = 25Â¥, ISD = 5.5A, VGS = 0V
Continuous Source to Drain
Current
IS
Pulse Source to Drain Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
ISM
tRR
TJ = 25Â¥, ISD = 5.5A,
dISD/dt = 100A/µs
QRR
TJ = 25Â¥, ISD = 5.5A,
dISD/dt = 100A/µs
Notes: 1. Pulse Test: Pulse widthâ¤â¤300µs, Duty Cycleâ¤â¤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. VDD = 50V, starting TJ = 25Â¥, L = 17mH, RG = 25â¦, peak IAS = 5.5A.
MOSFET
1.6 V
5.5 A
22 A
140 300 660 ns
0.93 2.1 4.3 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-077,A
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