UF730 Datasheet, PDF (5/6 Pages) Unisonic Technologies – 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET

UF730
TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)
MOSFET
Forward Bias Safe Operating Area
100
Operation in This Area
is Limited by R_DS(on)
10È°s
10
100È°s
1
T_C=25Â¥
T_J=Max Rated
0.1 ^{Single Pulse}
1
10
100
Drain to Source Voltage, V_DS (V)
1ms
10ms
DC
1000
Maximum ContionuousDrain Current vs. Case
Temperature
6
4
2
0
25
50
75
100
125
150
Case Temperature, T_C (Â¥)
Output Characteristics
10
V_GS=10
Pulse Duration=80È°s
8
V GS=6.0V
Duty Cycle = 0.5% Max
6
V_GS=5.5V
4
VGS=5.0V
2
VGS=4.5V
0
V_GS=4.0V
0
40
80
120
160 200
Drain to Source Voltage, V_DS (V)
Sturation Characteristics
10 _{Pulse Duration=80È°s VGS=10V}
Duty Cycle = 0.5% Max
8
VGS=6.0V
6
V_GS=5.5V
4
V_GS=5.0V
2
V_GS=4.5V
V_GS=4.0V
0
0
40
80
120
160 200
Drain to Source Voltage, VDS (V)
Transfer Characteristics
10
1
T_J=150Â¥
T_J=25Â¥
0.1
0.01
0
V_DS œ 50V
Pulse Duration=80È°s
Duty Cycle = 0.5% Max
2
4
6
8
10
Gate to Source Voltage, VGS (V)
Drain to Source on Resistance vs. Gate Voltage and
Drain Current
10
Pulse Duration=80È°s
Duty Cycle = 0.5% Max
8
6
V_GS=10V
4
V_GS=20V
2
0
0
3
6
9
12
15
Drain Current, ID (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-077,A