UF730 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET

UF730
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25Â¥, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (T_J =25Â¥~125Â¥)
Drain to Gate Voltage (R_GS = 20kΩ) (T_J =25¥~125¥)
Gate to Source Voltage
Continuous
Drain Current
T_C = 100Â¥
SYMBOL
V_DS
V_DGR
V_GS
I_D
I_D
RATINGS
400
400
±20
6.5
3.5
UNIT
V
V
V
A
A
Maximum Power Dissipation
Derating above 25Â¥
Pulsed
I_DM
P_D
22
A
93
W
0.6
W/Ċ
Single Pulse Avalanche Energy Rating
(V_DD=50V, starting T_J =25¥, L=17mH, R_G=25Ω, peak I_AS = 5.5A)
E_AS
300
mJ
Operating Temperature Range
T_OPR
-55 ~ +150
Ċ
Storage Temperature Range
T_STG
-55 ~ +150
Ċ
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case
SYMBOL
θ_JA
θ_Jc
RATINGS
80
1.67
ELECTRICAL CHARACTERISTICS (T_C =25Â¥, Unless Otherwise Specified.)
UNIT
Ċ/W
PARAMETER
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance




SYMBOL
TEST CONDITIONS
BV_DSS I_D = 250µA, V_GS = 0V
V_GS(THR)
I_D(ON)
I_DSS
I_GSS
V_DS = V_GS, I_D = 250µA
V_DS > I_D(ON) x R_DS(ON)MAX,
V_GS = 10V
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS,
V_GS = 0V, T_J = 125Â¥
V_GS = ±20V
R_DS(ON) I_D = 3.0A, V_GS = 10V
MIN TYP MAX UNIT
400
V
2.0
4.0 V
5.5
A
25 µA
250 µA
±100 nA
0.8 1.0 Ω
g_FS V_DS ≥ 10V, I_D = 3.3A
2.9 4.4
S
t_DLY(ON)
t_R
t_DLY(OFF)
t_F
Q_G(TOT)
Q_GS
Q_GD
C_ISS
C_OSS
C_RSS
V_DD = 200V, I_D ≈ 5.5A,
R_GS = 12Ω, R_L = 35Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V_GS = 10V, I_D = 5.5A,
V_DS = 0.8 x Rated BV_DSS
I_G(REF) = 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
V_DS = 25V, V_GS = 0V,f = 1MHz
10 17 ns
20 29 ns
35 56 ns
15 24 ns
20 35 nC
3.0
nC
10
nC
600
pF
150
pF
40
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-077,A