UM4599 Datasheet, PDF (8/9 Pages) Unitpower Technology Limited – N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UM4599
Typical Characteristics(Cont.) : Q2(P-channel)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
Crss
10
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
Threshold Voltage vs Junction Tempearture
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
-60 -20
20
60
100
140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-48V
8
VDS=-30V
6
VDS=-12V
0.1
0.01
0.001
100
VDS=-10V
Pulsed
TA=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
RDS(ON)
10 Limited
100μs
1ms
1
10ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
θ_JA=78°C/W, Single Pulse
100m
1s
DC
0.01
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
4
2
ID=-3.5A
0
0
2
4
6
8
10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
4.5
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V
0.5
RθJA=78°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
8