UM4599 Datasheet, PDF (3/9 Pages) Unitpower Technology Limited – N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UM4599
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
14
16
3.9
-
nC VDS=30V, ID=4.5A, VGS=10V
4.7
-
0.75
1.0
-
1.3
-
2.6
V VGS=0V, IS=1.3A
A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
-60
VGS(th)
-1.0
IGSS
-
-
IDSS
-
-
*RDS(ON)
-
*GFS
-
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*VSD
-
*IS
-
*ISM
-
-
-1.8
-
-
-
70
93
5
940
49
35
6
8
26
11
10
3
3.1
-0.75
-
-
-
-2.5
±100
-1
-10
90
125
-
-
-
-
13
18
31
20
15
-
-
-1.0
-1.3
-2.6
V VGS=0, ID=-250μA
V VDS=VGS, ID=-250μA
nA VGS=±20V, VDS=0
μA
VDS=-48V, VGS=0
VDS=-40V, VGS=0, Tj=55°C
mΩ
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-3A
S VDS=-10V, ID=-3.5A
pF VDS=-30V, VGS=0, f=1MHz
ns
ns
VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
nC VDS=-30V, ID=-3.5A, VGS=-10V
V VGS=0V, IS=-1.3A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
3