UM4599 Datasheet, PDF (7/9 Pages) Unitpower Technology Limited – N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UM4599
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
20
1.4
-10V, -9V, -8V, -7V,-6V,-5V
1.2
15
VGS=-4V
1
10
0.8
Brekdown Voltage vs Ambient Temperature
5
VGS=-3V
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=-3V
100
VGS=-4.5V
VGS=-10V
0.6
ID=-250μA,
VGS=0V
0.4
-60 -20 20
60 100 140 180
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=-3.5A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=-10V, ID=-3.5A
1.6
1.4
1.2
1
0.8
0.6
0.4
-60
RDS(ON)@Tj=25°C : 69mΩ typ.
-20 20
60 100 140 180
Tj, Junction Temperature(°C)
7