UM4599 Datasheet, PDF (2/9 Pages) Unitpower Technology Limited – N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UM4599
Absolute Maximum Ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
60
-60
V
VGS
±20
±20
V
Continuous Drain Current @TA=25 °C (Note 2)
ID
4.5
-3.5
A
Continuous Drain Current @TA=70 °C (Note 2)
ID
3.6
-2.8
A
Pulsed Drain Current (Note 1)
IDM
20
-20
A
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
PD
1.6 (Note 2)
W
0.9 (Note 3)
Operating Junction and Storage Temperature Range Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
60
-
-
V VGS=0, ID=250μA
1.0
1.7
2.5
V VDS=VGS, ID=250μA
-
-
±100 nA VGS=±20V, VDS=0
-
-
-
-
1
10
μA
VDS=48V, VGS=0
VDS=40V, VGS=0, Tj=55°C
-
-
37
42
58
60
mΩ
VGS=10V, ID=4.5A
VGS=4.5V, ID=4A
-
6
-
S VDS=10V, ID=4.5A
-
1173
-
-
45
-
pF VDS=25V, VGS=0, f=1MHz
-
35
-
-
8
20
-
-
12
30
18
35
ns VDS=30V, ID=1A, VGS=10V, RG=6Ω
-
7
15
2