CHK080A-SRA Datasheet, PDF (8/14 Pages) United Monolithic Semiconductors – 80W Power Packaged Transistor

80W Power Packaged Transistor
CHK080A-SRA
Typical Performance on Demonstration Board (Ref. 61500192)
Calibration and measurements are done on the connector reference accesses of the
demonstration boards
Tcase = +25°C, Pulsed mode ⁽¹⁾
Measured Id, Gain, Pout & PAE
F = 3GHz, V_DS = 50V, I_{D_Q} = 600mA
55
10
Pulsed mode at 3GHz
50
9
45
8
Pout
40
7
35
6
PAE
30
5
Id
25
4
20
Gain
3
15
2
10
1
5
0
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Input Power (dBm)
Measured Gain, Pout & PAE
Pin = 39dBm, V_DS = 50V, I_{D_Q} = 600mA
60
58
56
54
52
50
48
46
44
42 ^Gain
40
38
36
34
32
30
2.7
2.8
Pulsed mode
PAE
Pout
2.9
3
3.1
3.2
3.3
Frequency (GHz)
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
3.4
(1) _{Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs}
offset between DC and RF pulse.
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
8/14
Specifications subject to change without notice
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