CHK080A-SRA Datasheet, PDF (3/14 Pages) United Monolithic Semiconductors – 80W Power Packaged Transistor

80W Power Packaged Transistor
CHK080A-SRA
RF Characteristics (Pulsed)
Tcase= +25°C, Pulsed mode ⁽¹⁾, F=3GHz, V_D=50V, I_{D_Q}=600mA (ID_Q =300mA on each transistor)
Symbol
Parameter
Min Typ Max Unit
G_SS
Small Signal Gain
15
17
dB
P_SAT
PAE
Saturated Output Power
Max Power Added Efficiency
80 100
W
55
65
%
G_{PAE_MAX} Associated Gain at Max PAE
13
dB
(1) _{Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs}
offset between DC and RF pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB. The typical performance
achievable in more than 20% frequency band around 3GHz was demonstrated using the
reference board 61500192 presented hereafter.
Absolute Maximum Ratings
Tcase= +25°C^{(1), (2), (3)}
Symbol
Parameter
V_DS
Drain-Source Voltage
V_{GS_Q}
Gate-Source Voltage
I_{G_MAX}
Maximum Gate Current in forward mode
I_{G_MIN}
Maximum Gate Current in reverse mode
I_{D_MAX}
Maximum Drain Current
P_IN
Maximum Input Power (typical)
T_j
Junction Temperature
T_STG
Storage Temperature
T_Case
Case Operating Temperature
Rating
60
-10, +2
150
-12
12
41
220
-55 to +150
See note
Unit
V
V
mA
mA
A
dBm
°C
°C
°C
Note
(6)
(4)
(5)
(4)
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
(3) _{The given values must not be exceeded at the same time even momentarily for any}
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) _{Max junction temperature must be considered}
(5) _{@3GHz - Linked to and limited by IG_MAX & IG_MIN values}
(6) _{VGS_Q max limited by ID_MAX and IG_MAX values}
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
3/14
Specifications subject to change without notice
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