CHK080A-SRA Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 80W Power Packaged Transistor

CHK080A-SRA
80W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK080A-SRA is an unmatched
Packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication.
The CHK080A-SRA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
The CHK080A-SRA is available in a
ceramic-metal flange power package
providing low parasitic and low thermal
resistance.
Main Features
■ Wide band capability: up to 3.5GHz
■ Pulsed and CW operating modes
■ High power : > 80W
■ High Efficiency : up to 70%
■ DC bias: V_DS =50V @ I_{D_Q} =600mA
■ MTTF > 10⁶ hours @ Tj=200°C
■ RoHS Flange Ceramic package
V_DS = 50V, I_{D_Q} = 600mA, Freq=3GHz
Pulsed mode
65
6.5
60
Pulsed mode at 3GHz _PAE
6
55
5.5
50
5
45
Pout _4.5
40
4
35
Id
3.5
30
3
25
2.5
20
2
15
1.5
10
Gain
1
5
0.5
0
0
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Input Power (dBm)
Intrinsic performances of the package device
Main Electrical Characteristics
Tcase= +25°C, Pulsed mode, F=3GHz, V_DS=50V, I_{D_Q}=600mA (I_{D_Q} =300mA on each transistor)
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
17
-
dB
80
100
-
W
50
65
-
%
G_{PAE_MAX} Associated Gain at Max PAE
13
-
dB
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]