CHK080A-SRA Datasheet, PDF (2/14 Pages) United Monolithic Semiconductors – 80W Power Packaged Transistor

80W Power Packaged Transistor
CHK080A-SRA
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_DS
V_{GS_Q}
Drain to Source Voltage 20
50
Gate to Source Voltage
-1.8
V
V V_D=50V, I_{D_Q}=600mA
(ID_Q =300mA on each
transistor)
I_{D_Q}
I_{D_MAX}
Quiescent Drain
Current
Drain Current
0.6 2
4
(1)
A V_D=50V
A V_D=50V,
Compressed mode
I_{G_MAX}
Gate Current
(forward mode)
0 48 mA Compressed mode
T_{j_max}
Junction Temperature
(1) _{Limited by dissipated power}
200 °C
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_P
I_{D_SAT}
I_{G_leak}
Pinch-Off Voltage
-3
-2
-1
Saturated Drain Current
16 ⁽¹⁾
V V_D=50V, I_D=I_DSS/100
A V_D=7V, V_G=2V
Gate Leakage Current -6
(reverse mode)
mA V_D=50V, V_G=-7V
V_BDS
Drain-Source
Break-down Voltage
200
V V_G=-7V, I_D=20mA
R_TH
Thermal Resistance
1.8
°C/W CW Mode
(1) _{For information, limited by ID_MAX , see on Absolute Maximum Ratings}
RF Characteristics (CW)
Tcase= +25°C, CW mode, F=3GHz, V_DS=50V, I_{D_Q}=600mA (I_{D_Q} =300mA on each transistor)
Symbol
Parameter
Min Typ Max Unit
G_SS
Small Signal Gain
14
16
dB
P_SAT
Saturated Output Power
70
80
W
PAE
Max Power Added Efficiency
45
50
%
G_{PAE_MAX} Associated Gain at Max PAE
12
dB
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
2/14
Specifications subject to change without notice
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