CHA7012 Datasheet, PDF (6/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

CHA7012
X-band High Power Amplifier
3
2.9
2.8
2.7
2.6
2.5
2.4
9.2GHz
9.4GHz
2.3
9.6GHz
2.2
9.8GHz
10GHz
2.1
10.2GHz
2
10.4GHz
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
Collector current @ 25°C versus compression and fr equency
Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pulse= 100µs Duty cycle 20%
3.0
2.8
2.6
Vctrl
2.4
TTL Input Voltage
2.2
2.0
+80 °C
1.8
1.6
1.4
20 °C
20 °C
1.2
+80 °C
-40 °C
1.0
-40 °C
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
TI/Vctrl (V)
Collector quiescent current versus TI & Vctrl and temperature
Temperatures: -40°C; 20°C;+80°C Vc=7.5V Pulse= 100µs Duty cycle 20%
Ref. : DSCHA70127235 - 23 Aug 07
6/10
Specifications subject to change without notice
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