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CHA7012 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier
CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7012 chip is a monolithic two-
stage GaAs high power amplifier designed
for X band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridge. A nitride layer
protects the transistors and the passive
components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and
DC grounded
-bond pads and back side are gold plated
for compatibility with eutectic die attach
method
and
thermosonic
or
thermocompression bonding process.
Main Features
Frequency band : 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing
circuit
Chip size: 5.00 x 3.68 x 0.1mm
TI Vc TO
TTL
Circuit
Vctrl Vc Vc
Biasing
Circuit
IN
OUT
TTL
Circuit
TI Vc TO
Biasing
Circuit
Vctrl Vc Vc
44
PAE @ 3dBc (%)
40
36 Pout @ 3dBc
(dBm
32
28
Linear Gain (Pin=0dBm)
24
20
16
9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6
Main Characteristics
Frequency ( GHz)
Pout & PAE @3dBc and Linear Gain (Temperature 25°C)
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ Max Unit
Fop Operating frequency range
9.2
10.4 GHz
Psat Saturated output power @ 25°C
9
W
P_3dBc Output power @ 3dBc @ 25°C
7
W
G
Small signal gain @ 25°C
20
dB
Top Operating temperature range
-40
+80 °C
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70127235 - 23 Aug 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09