CHA7012 Datasheet, PDF (3/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

X-band High Power Amplifier
CHA7012
Typical measured characteristics
Measurements on Jig:
Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs , Duty cycle = 20%
30
28
26
24
22
20
18
16
+20°C
14
+80°C
-40°C
12
10
8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Linear gain versus frequency and temperature
42
41
40
39
38
37
+20°C
36
+80°C
35
-40°C
34
33
32
8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Output Power @ 3dBc versus frequency and temperature
Ref. : DSCHA70127235 - 23 Aug 07
3/10
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Tel.: [phone] - Fax : [phone]
Specifications subject to change without notice