CHA7012 Datasheet, PDF (2/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

CHA7012
X-band High Power Amplifier
Electrical Characteristics
Tamb = 20°C, Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency
9.2
10.4 GHz
G
Small signal gain
17.5 20
23
dB
G_T
Small signal gain variation versus
temperature
-0.025
dB/°C
RLin
Input Return Loss
8
10
dB
RLout
Output Return Loss
8
12
dB
Psat
Saturated output power
39.5
dBm
Psat_T
Saturated output power variation versus
temperature
-0.01
dB/°C
P_3dBc Output power @ 3dBc (3)
38 38.5
dBm
PAE_3dBc Power Added Efficiency @ 3dBc
34
38
%
Vc
Power supply voltage (3)
7.5
8
V
Ic
Power supply quiescent current (1)
1.9
A
TI
TTL input voltage
0
5
V
I_TI
TTL input current
1
mA
Vctrl
Collector control voltage
5
V
Zctr
Vctrl input port impedance (2)
350
Ohm
Top
Operating temperature range
-40
+80
°C
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vc
Ic
Ic_sat
Vctrl
Tj
Tstg
Parameter
Compression level (2)
Power supply voltage with RF
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature
Storage temperature range
Values
Unit
6
dBc
8
V
2.8
A
3.5
A
6.5
V
175
°C
-55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) For higher compression the level limit can be increased by decreasing the voltage
Vc using the rate 0.5 V / dBc
Equivalent Thermal resistance to Backside: 6°C/W
Ref. : DSCHA70127235 - 23 Aug 07
2/10
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Specifications subject to change without notice