CHK8015-99F Datasheet, PDF (5/8 Pages) United Monolithic Semiconductors – 16W Power Transistor

16W Power Transistor
CHK8015-99F
Elementary Cell Maximum Gain & Stability Characteristics
T_ref = +25°C, V_DS = +30V, I_{D_Q} = 50mA, simulated results
35
7
30
6
MAG
25
5
20
4
15
3
10
2
5
K Factor
1
0
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Elementary Cell Load Pull Performances
T_ref = +25°C, V_DS = +30V, I_{D_Q} = 50mA, simulated results
Zs
Zl
The impedances are chosen as a trade-off between Output Power, PAE and Stability of the
device. Second harmonic of output load has been tuned.
These values are given in the bonding pads reference plan.
Frequency
(GHz)
3
6
9
12
15
18
Zs
15 + j18
8.2 + j14.8
2.8 + j6.4
2.1 + j3.5
1.87 + j0
1.7 – j3.1
Zl
60 + j65
24.8 + j51.7
11.7 + j33.7
8 + j24
5 + j17.3
4 + j12.7
Gain (dB)
@PAE_max
12.8
12.4
10.8
10
8.6
7.6
PAE_max
(%)
72
69
68
52
50
46
Pout (W)
@PAE_max
4.9
4.4
4.7
3.8
3.6
3.6
Pout_max
(W)
5.3
5
5.1
4.8
4.7
4.8
Ref. : DSCHK80156315 - 10 Nov 16
5/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com