CHK8015-99F Datasheet, PDF (2/8 Pages) United Monolithic Semiconductors – 16W Power Transistor

CHK8015-99F
16W Power Transistor
Recommended Operating Ratings
T_ref = +25°C
Symbol
Parameter
Min Typ
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
-3.3
V_{DG_peak} Drain-Gate Voltage
80
V_{GS_peak} Gate-Source Voltage
-20
I_{D_Q}
Quiescent Drain Current
0.2
I_{D_MAX}
Drain Current
1
I_{G_MAX}
Gate Current in forward
mode
0
T_{j_MAX}
Junction temperature
(1) _{Power dissipation must be considered}
Max
30
0.46
(1)
16
200
Unit
V
V
V
V
A
A
mA
°C
Conditions
V_DS=30V, I_{D_Q}=200mA
DC+RF
DC+RF
V_DS=30V
V_DS=30V,
mode
Compressed
DC or
mode
(1)
Compressed
DC Characteristics
T_ref = +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_P
Pinch-Off Voltage
-4 -3.4 -2.8
V V_D=10V,I_D= I_DSS /100
I_{D_SAT}
Saturated Drain Current
3.6
A ⁽¹⁾, V_D=10V, V_G=1V
I_{G_leak}
Gate Leakage Current
-0.8
mA V_D=50V, V_G=-7V
V_BDG
Drain-Gate Break-down
Voltage
120
V V_G=-7V, I_D=20mA
R_TH
Thermal Resistance
6
°C/W
CW
T_ref=75°C,⁽²⁾
mode,
(1) _{For information, limited by ID_MAX , see on ROR & AMR}
(2) _{The thermal resistance is given for the power bar mounted on carrier plate (20µm Au/Sn}
soldering + 1.4mm Cu/Mo/Cu). The reference temperature is defined on the carrier back
side. Thermal analysis is highly recommended, more details are available on request.
RF Characteristics
T_ref = +25°C, CW mode, Freq = 9GHz, V_DS = 30V, I_{D_Q} = 200mA
Symbol
Parameter
Min Typ Max Unit
G_SS
P_SAT
PAE
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
17
dB
20
W
68
%
G_{PAE_MAX} Associated Gain at Max PAE
11
dB
These values are deduced from elementary power cell performances
Conditions
Ref. : DSCHK80156315 - 10 Nov 16
2/8
Specifications subject to change without notice
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