CHK8015-99F Datasheet, PDF (3/8 Pages) United Monolithic Semiconductors – 16W Power Transistor

16W Power Transistor
CHK8015-99F
Absolute Maximum Ratings
T_ref = +25°C^{(1) (2) (3)}
Symbol
Parameter
Rating
Unit
Note
V_{DS_Q}
V_{GS_Q}
Drain-Source Biasing Voltage
Gate-Source Biasing Voltage
55
V
-10, +2
V
V_{DG_peak} Drain-Gate Voltage (DC+RF)
120
V
V_{GS_peak} Gate-Source Voltage (DC+RF)
-25
V
I_{G_MAX}
Maximum Gate Current
32
mA
I_{G_MIN}
Minimum Gate Current
-2
mA
I_{D_MAX}
Maximum Drain Current
See note
A
(4)
P_IN
Maximum Input Power
See note
dBm
(5)
T_j
Maximum Junction Temperature
230
°C
T_STG
Storage Temperature
-55 to +150
°C
T_Case
Case Operating Temperature
See note
°C
(4)
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
(2) _{Duration < 1s.}
(3) _{The given values must not be exceeded at the same time even momentarily for any}
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) _{Max junction temperature must be considered}
(5) _{Linked to and limited by Ig_max & Ig_min values. Maximum input power depends on}
frequency and should not exceed 2dB above PAE_max.
Ref. : DSCHK80156315 - 10 Nov 16
3/8
Specifications subject to change without notice
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