CHK8015-99F Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 16W Power Transistor

CHK8015-99F
16W Power Transistor
GaN HEMT on SiC
Description
The CHK8015-99F is a 16W Gallium Nitride
High Electron Mobility Transistor. This product
offers a general purpose and broadband
solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate
length GaN HEMT technology on SiC
substrate.
It is proposed in a bare die form and requires
an external matching circuitry.
Main Features
■ Wide band capability up to 18GHz
■ Pulsed and CW operating modes
■ GaN technology: High Pout & High PAE
■ DC bias: V_D=30V @I_{D_Q}=200mA
■ Chip size 0.88x2x0.1mm
■ RoHS N°2011/65
■ REACh N°1907/2006
Main Electrical Characteristics
T_ref = +25°C, CW mode, Freq = 9GHz, V_DS = 30V, I_{D_Q} = 200mA
Symbol
Parameter
Min Typ
G_SS
Small Signal Gain
17
P_SAT
Saturated Output Power
20
PAE
Max Power Added Efficiency
68
G_{PAE_MAX} Associated Gain at Max PAE
11
These values are deduced from elementary power cell performances
Max Unit
dB
W
%
dB
Ref. : DSCHK80156315 - 10 Nov 16
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com